november 2008 FDPF680N10T n-chan nel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDPF680N10T rev. a www.fairchildsemi.com 1 FDPF680N10T n-channel powertrench ? mosfet 100v, 12a, 68m features ?r ds(on) = 54m ( typ.)@ v gs = 10v, i d = 6a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant application ? dc to ac converters / synchronous rectification description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. d g s to-220f g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c) 12 a -continuous (t c = 100 o c) 7.6 i dm drain current - pulsed (note 1) 48 a e as single pulsed avalanche energy (note 2) 50.4 mj dv/dt peak diode recovery dv/dt (note 3) 13.0 v/ns p d power dissipation (t c = 25 o c) 24 w - derate above 25 o c0.19w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 5.2 o c/w r ja thermal resistance, junction to ambient 62.5
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDPF680N10T FDPF680N10T to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 6a - 54 68 m g fs forward transconductance v ds = 10v, i d = 12a (note 4) -26-s c iss input capacitance v ds = 50v, v gs = 0v f = 1mhz - 750 1000 pf c oss output capacitance - 60 80 pf c rss reverse transfer capacitance - 25 40 pf q g(tot) total gate charge v ds = 80v, i d = 12a v gs = 10v (note 4, 5) -1317nc q gs gate to source gate charge - 4 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 50v, i d = 12a v gs = 10v, r gen = 10 (note 4, 5) -1336ns t r turn-on rise time - 19 48 ns t d(off) turn-off delay time - 18 46 ns t f turn-off fall time - 6 22 ns i s maximum continuous drain to source diode forward current - - 12 a i sm maximum pulsed drain to source diode forward current - - 48 a v sd drain to source diode forward voltage v gs = 0v, i sd = 12a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 12a di f /dt = 100a/ s (note 4) -29-ns q rr reverse recovery charge - 35 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.7mh, i as = 12a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 12a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 10 0.1 1 10 60 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 45678 1 10 60 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0.0 0.5 1.0 1.5 0.1 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 102030405060 0 0.05 0.10 0.15 0.20 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.01 0.1 1 10 50 10 100 1000 5000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 03691215 0 2 4 6 8 10 *note: i d = 12a v ds = 25v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 6a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 200 0.01 0.1 1 10 100 20 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 10 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 5.2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g s am e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g s am e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDPF680N10T n-chan nel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 7 mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 dimensions in millimeters
FDPF680N10T n-channel powertrench ? mosfet FDPF680N10T rev. a www.fairchildsemi.com 8 rev. i37 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fa richild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts expe rience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairch ild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any wa rranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporatio n, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. build it now? 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